Mohammad Kaifi1, Siddiqui M.J.2, Abbasi T.A.3, Khan M.U.4
1Department of Electronics Engineering, Aligarh Muslim University, Aligarh, 202002, India
2Department of Electronics Engineering, Aligarh Muslim University, Aligarh, 202002, India
3Department of Electronics Engineering, Aligarh Muslim University, Aligarh, 202002, India
4Department of Electrical Engineering, Rameshwaram Institute of Tech. & Management, Lucknow, India
Received : - Accepted : - Published : 21-12-2010
Volume : 1 Issue : 2 Pages : 9 - 12
J Electron Electr Eng 1.2 (2010):9-12
Silicon on insulator (SOI) CMOS offers performance gain over bulk CMOS mainly due to reduced parasitic capacitances and latchup. It is most promising technology when low cost low power and low voltage suppply is required. kink effect and self heating are two important points of concern in case of SOI MOSFET. In this paper we first briefly discuss the SOI technology, kink effect and lattice heating in SOI MOSFET's and then we present the simulation results obtained using the industry standard software ATLAS from SILVACO.
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